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SMBTA42/MMBTA42
NPN Silicon High-Voltage Transistors * Low collector-emitter saturation voltage * Complementary types: SMBTA92 / MMBTA92(PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101
3 1
2
Type SMBTA42/MMBTA42
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipationTS 74 C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2)
1Pb-containing 2For
Marking s1D
Pin Configuration 1=B 2=E 3=C
Package SOT23
Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Symbol RthJS
Value 300 300 6 500 100 360 150 -65 ... 150 Value 210
Unit V
mA mW C
Unit K/W
package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-19
SMBTA42/MMBTA42
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 A, IE = 0
V(BR)CBO V(BR)EBO I CBO
300 6
-
A
Emitter-base breakdown voltage
IE = 100 A, IC = 0
Collector-base cutoff current
VCB = 200 V, IE = 0 VCB = 200 V, IE = 0 , T A = 150 C
I EBO h FE
-
0.1 20 100 nA -
Emitter-base cutoff current
VEB = 5 V, IC = 0
-
DC current gain1)
IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V
25 40 40
VCEsat VBEsat
-
0.5 0.9 V
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
-
Base emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
AC Characteristics Transition frequency
IC = 10 MHz, VCE = 20 V, f = 100 MHz fT Ccb
50 -
70 -
3
MHz pF
Collector-base capacitance
VCB = 20 V, f = 1 MHz
1Pulse
test: t < 300s; D < 2%
2
2007-04-19
SMBTA42/MMBTA42
DC current gain hFE = (IC)
VCE = 10 V
10 3 5 h FE
2 SMBTA 42/43 EHP00844
Operating range I C = (VCEO)
TA = 25C, D = 0
10 3 mA
SMBTA 42/43 EHP00841
C
10 2 10 s
10 5
5 100 s 1 ms 100 ms DC 10 5
0
10 1 5
10 1 5
500 ms
10 0 -1 10
5 10
0
5 10
1
5 10
2
mA 10
3
10 -1 10 0
5
10 1
5
10 2
V5 V CEO
10 3
C
Collector current I C = (VBE)
VCE = 10V
SMBTA 42/43 EHP00843
Collector cutoff current ICBO = (TA)
VCBO = 160 V
SMBTA 42/43 EHP00842
10 3 mA
10 4 nA 10 3 5 10 2 5 10 1 5 10 0 5 10 -1
C
10 5
2
max
CBO
10 1 5
typ
10 0 5
10 -1 0 0.5 1.0 V BE V 1.5
0
50
100 TA
C 150
3
2007-04-19
SMBTA42/MMBTA42
Transition frequency fT = (IC) VCE = 10 V, f = 100 MHz
10 3 MHz
CCB(C EB)
SMBTA 42/43 EHP00839
Collector-base capacitance Ccb = (V CB) Emitter-base capacitance Ceb = (VEB)
90
pF
fT
70 60 50
10
2
40
CEB
5
30 20 10
CCB
10
1
10 0
5
10 1
5
10 2 mA 5
10 3
0 0
4
8
12
16
V
22
C
VCB(VEB)
Total power dissipation Ptot = (TS)
Permissible Pulse Load
Ptotmax/P totDC = (tp)
400
10 3 Ptot max 5 Ptot DC
SMBTA 42/43
EHP00840
mW
320 280
D=
tp T
tp T
Ptot
10 2 5
240 200 160
10 1
120
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
80 40 0 0
15
30
45
60
75
90 105 120
C TS
150
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
4
2007-04-19
Package SOT23
SMBTA42/MMBTA42
Package Outline
0.15 MIN.
1 0.1 0.1 MAX.
1.3 0.1
2.9 0.1
3
B
2.4 0.15
10 MAX.
0.4 +0.1 -0.05
1)
1
2
10 MAX.
C 0.95 1.9
0.08...0.1
A
5
0...8
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
5
2007-04-19
SMBTA42/MMBTA42
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
6
2007-04-19

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